參數(shù)資料
型號: 2PB709BRL
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 50 V, 200 mA PNP general-purpose transistors
中文描述: 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 6/13頁
文件大小: 302K
代理商: 2PB709BRL
2PB709BRL_2PB709BSL
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2010
6 of 13
NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
V
CE
=
10 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
55
°
C
Fig 6.
2PB709BSL: DC current gain as a function of
collector current; typical values
T
amb
= 25
°
C
Fig 7.
2PB709BSL: Collector current as a function of
collector-emitter voltage; typical values
I
C
/I
B
= 10
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
55
°
C
Fig 8.
2PB709BSL: Collector-emitter saturation voltage as a function of collector current; typical values
006aac460
200
400
600
h
FE
0
10
1
I
C
(mA)
10
3
10
2
1
10
(1)
(3)
(2)
V
CE
(V)
0.0
10.0
8.0
4.0
6.0
2.0
006aac461
0.04
0.08
0.12
I
C
(A)
0.0
I
B
(mA) =
0.75
0.7
0.6
0.65
0.55
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
006aac462
I
C
(mA)
10
1
10
3
10
2
1
10
10
1
1
V
CEsat
(V)
10
2
(1)
(2)
(3)
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2PB709BRL,215 功能描述:兩極晶體管 - BJT PNP -50 V -200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PB709BSL 制造商:NXP Semiconductors 功能描述:TRANSISTORPNP50V0.2ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,50V,0.2A,SOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,50V,0.2A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-200mA; DC Current Gain hFE:290; No. of Pins:3 ;RoHS Compliant: Yes
2PB709BSL,215 功能描述:兩極晶體管 - BJT PNP -50 V -200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PB710 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-236VAR
2PB710A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor