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參數(shù)資料
| 型號： | 2SA0719 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For low-frequency power amplification and driver amplification Complementary |
| 中文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 2SA0719 |
Transistors
2SA0719, 2SA0720
(2SA719, 2SA720)
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00002CED
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■
Features
Complementary pair with 2SC1317 and 2SC1318
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SA0719
V
CBO
30
60
25
50
5
500
1
V
2SA0720
Collector-emitter voltage
(Base open)
2SA0719
V
CEO
V
2SA0720
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
mA
Peak collector current
A
Collector power dissipation
P
C
625
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
(Emitter open)
2SA0719
V
CBO
I
C
=
10
μ
A, I
E
=
0
30
60
25
50
5
V
2SA0720
Collector-emitter voltage
(Base open)
2SA0719
V
CEO
I
C
=
10 mA, I
B
=
0
V
2SA0720
Emitter-base voltage (Collector open)
V
EBO
I
CBO
h
FE1
*
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
Forward current transfer ratio
85
340
h
FE2
V
CE(sat)
40
Collector-emitter saturation voltage
0.35
1.1
0.60
1.5
V
Base-emitter saturation voltage
V
BE(sat)
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
6
15
pF
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA0720 | For low-frequency power amplification and driver amplification Complementary |
| 2SA0720A | For low-frequency driver amplification Complementary |
| 2SA0777 | For low-frequency driver amplification Complementary |
| 2SA0794 | Silicon PNP epitaxial planar type |
| 2SA0794A | Silicon PNP epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0719(2SA719) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SA0719Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VAR |
| 2SA0719R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VAR |
| 2SA0719S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VAR |
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