參數(shù)資料
型號: 2SA0720A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: For low-frequency driver amplification Complementary
中文描述: 500 mA, 70 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 72K
代理商: 2SA0720A
Transistors
2SA0720A
(2SA720A)
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJC00003BED
For low-frequency driver amplification
Complementary to 2SC1318A
Features
High collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
80
70
5
0.5
1
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
625
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
80
70
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
I
CBO
h
FE1
*2
h
FE2
0.1
μ
A
85
240
40
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
V
CE(sat)
0.2
0.85
0.6
1.50
V
V
BE(sat)
f
T
C
ob
V
Transition frequency
120
MHz
Collector output capacitance
(Common base, input open circuited)
20
30
pF
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Rank
Q
R
h
FE1
85 to 170
120 to 240
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurment
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.
相關PDF資料
PDF描述
2SA0777 For low-frequency driver amplification Complementary
2SA0794 Silicon PNP epitaxial planar type
2SA0794A Silicon PNP epitaxial planar type
2SA794 Silicon PNP epitaxial planar type
2SA794A Silicon PNP epitaxial planar type
相關代理商/技術參數(shù)
參數(shù)描述
2SA0720A(2SA720A) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0720A (2SA720A) - PNP Transistor
2SA0720AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 500MA I(C) | TO-226AA
2SA0720AR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 500MA I(C) | TO-226AA
2SA0720ARA 功能描述:TRANS PNP 70VCEO 500MA TO-92 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR