參數(shù)資料
型號(hào): 2SA0777
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: For low-frequency driver amplification Complementary
中文描述: 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 81K
代理商: 2SA0777
Transistors
2SA0777
(2SA777)
Silicon PNP epitaxial planar type
1
Publication date: November 2002
SJC00004BED
For low-frequency driver amplification
Complementary to 2SC1509
Features
High collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
80
80
5
0.5
1
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
1
W
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
100
μ
A, I
B
=
0
I
E
=
1
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
5 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 0, f = 1 MHz
80
80
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
I
CBO
h
FE1 *2
h
FE2
0.1
μ
A
90
220
50
100
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.85
0.4
1.2
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
120
MHz
Collector output capacitance
(Common base, input open circuited)
11
20
pF
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Palse measurement
*2: Rank classification
5.9
±
0.2
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
1
±
0
2.54
±
0.15
(
(1.27)
(1.27)
0.45
+0.2
0.45
+0.2
1
3
2
Rank
Q
R
h
FE1
90 to 155
130 to 220
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Note) The part number in the parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA0777(2SA777) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SA07770Q 功能描述:TRANS PNP 80VCEO .5A TO-92L RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA07770R 功能描述:TRANS PNP 80VCEO .5A TO-92L RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA0777Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-226VAR
2SA0777R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-226VAR