參數(shù)資料
型號(hào)： 2SA794
廠商： PANASONIC CORP
元件分類(lèi)： 功率晶體管
英文描述： Silicon PNP epitaxial planar type
中文描述： 0.5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 101K
代理商： 2SA794
Power Transistors
2SA0794
(2SA794)
, 2SA0794A
(2SA794A)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00001BED
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
■
Features
High collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
h
FE1
90 to 155
130 to 220
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SA0794
V
CBO
100
120
100
120
5
0.5
1
V
2SA0794A
Collector-emitter voltage
(Base open)
2SA0794
V
CEO
V
2SA0794A
Emitter-base voltage (Collector open)
V
EBO
I
C
I
CP
V
Collector current
A
Peak collector current
A
Collector power dissipation
P
C
1.2
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SA0794
V
CEO
I
C
=
100
μ
A, I
B
=
0
100
120
5
V
2SA0794A
Emitter-base voltage (Collector open)
V
EBO
h
FE1 *
I
E
=
1
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
5 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
Forward current transfer ratio
90
220
h
FE2
50
100
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.2
0.85
0.4
1.20
V
Base-emitter saturation voltage
V
Transition frequency
f
T
C
ob
120
MHz
Collector output capacitance
(Common base, input open circuited)
20
30
pF
Note) The part numbers in the parenthesis show conventional part number.
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
相關(guān)PDF資料
PDF描述
2SA794A Silicon PNP epitaxial planar type
2SA0838 Shrink Tubing; Tubing Size Diameter:0.25"; Wall Thickness Recovered Nominal:0.047"; Inner Diameter Max Recovered:0.080"; Expanded Inner Diameter:0.250"; Material:Polyolefin
2SA838 Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
2SA0879 For general amplification Complementary to 2SC1573
2SA0886 Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA794A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Silicon PNP Power Transistors
2SA794AP 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126
2SA794AQ 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126
2SA794AR 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126
2SA794AS 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126
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