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參數(shù)資料
| 型號(hào)： | 2SA0838 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:0.25"; Wall Thickness Recovered Nominal:0.047"; Inner Diameter Max Recovered:0.080"; Expanded Inner Diameter:0.250"; Material:Polyolefin |
| 中文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 2SA0838 |
1
Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
I
Features
G
High transition frequency f
T
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–30
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CE
= –10V, I
C
= –1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA,
f = 10.7MHz
min
70
150
typ
– 0.1
– 0.7
300
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
50
2.0
Unit
μ
A
μ
A
V
V
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA838 | Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359) |
| 2SA0879 | For general amplification Complementary to 2SC1573 |
| 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 2SA886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 2SA0900 | For low-frequency Power amplification Complementary |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0838(2SA838) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0838 (2SA838) - PNP Transistor |
| 2SA0838B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | TO-226AA |
| 2SA0838C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | TO-226AA |
| 2SA0879 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For general amplification Complementary to 2SC1573 |
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