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參數(shù)資料
| 型號： | 2SA1190D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 59K |
| 代理商： | 2SA1190D |
Rev.3.00 Aug 10, 2005 page 1 of 7
2SC5080
Silicon NPN Epitaxial
REJ03G0742-0300
(Previous ADE-208-1132A)
Rev.3.00
Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 13.5 GHz Typ
High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
1. Collector
2. Emitter
3. Base
4. Emitter
1
4
3
2
Note:
Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1190E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1191D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
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