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參數(shù)資料
| 型號： | 2SA1190D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SA1190D |
2SC5080
Rev.3.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
15
—
V
IC = 10
A, IE = 0
Collector cutoff current
ICBO
—
1
A
VCB = 12 V, IE = 0
ICEO
—
1
mA
VCE = 8 V, RBE =
∞
Emitter cutoff current
IEBO
—
10
A
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
90
160
VCE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.4
0.75
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
10.5
13.5
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
15
18
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1190E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1191D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
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