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參數(shù)資料
| 型號： | 2SA1190D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SA1190D |
2SC5080
Rev.3.00 Aug 10, 2005 page 3 of 7
Main Characteristics
150
100
50
Ambient Temperature Ta (
°C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector
Power
Dissipation
P
C
(mW)
200
160
120
80
40
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
0.1
0
110
100
V
= 5V
CE
DC Current Transfer Ratio vs.
Collector Current
20
16
12
8
4
12
5
10
20
Collector Current IC (mA)
50
0
V
= 5V
CE
Gain Bandwidth Product vs.
Collector Current
V
= 1V
CE
Gain
Bandwidth
Product
f
T
(GHz)
Collector
Output
Capacitance
C
ob
(pF)
Collector to Base Voltage VCB (V)
0.1
5
2
1
0.5
0.2
0.1
0.2
0.5
1
2
5
10
20
I
= 0
f = 1 MHz
E
Collector Output Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
12
5
10
20
Collector Current IC (mA)
50
Power
Gain
PG
(dB)
0
V
= 5V
CE
f = 900 MHz
f = 2 GHz
Power Gain vs. Collector Current
5
4
3
2
1
2
510
20
Collector Current IC (mA)
50
Noise
Figure
NF
(dB)
0
V
= 5V
CE
f = 900MHz
f = 2GHz
Noise Figure vs. Collector Current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1190E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1191D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
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