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參數(shù)資料
| 型號： | 2SA1739 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-70, SMINI3-G1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SA1739 |
1
Transistor
2SA1739
Silicon PNP epitaxial planer type
For high speed switching
I
Features
G
High-speed switch (pair with 2SC3938)
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–15
–15
–4
–100
–50
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= –8V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –1V, I
C
= –10mA
V
CE
= –1V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
(Note 1) Next page
(Note 1) Next page
(Note 1) Next page
min
50
30
800
typ
– 0.1
1500
1
12
20
19
max
– 0.1
– 0.1
150
– 0.2
Unit
μ
A
μ
A
V
MHz
pF
ns
ns
ns
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
50 ~ 120
90 ~ 150
Marking symbol :
AX
2.1
±
0.1
1
±
0
0
±
0
0
±
0
0
+
–
0
+
–
2
±
0
1.25
±
0.1
0.425
0.425
1
3
2
0
0
0
0
0.2
±
0.1
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相關代理商/技術參數(shù) |
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