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參數(shù)資料
| 型號： | 2SA1988 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MP-88, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SA1988 |
3
2SA1988
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Semoconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
COLLECTOR SATURATION VOLTAGE AND
BASE SATURATION VOLTAGE
VS
COLLECTOR CURRENT
IC - Collector Current - A
0.01
0.1
1.0
10
0.1
1.0
10
TA= 150
°C
75
°C
25
°C
-25
°C
TA=-25
°C
25
°C
75
°C
150
°C
V
CE
-Collector
Saturation
voltage
-
V
BE
-
Base
Saturation
Voltage
-
V
OUTOPUT CAPASITANCE VS
COLLECTOR TO BASE VOLTAGE
VCB - Collector to Base Voltage -V
IE=0
f=1MHz
10
-0.1
100
1 000
-1.0
-10
-100
-1000
C
ob
-
Output
Cpacitance
-
pF
IC=10IB
Pulsed
IC - Collector Current - A
-0.1
10
100
1 000
-1.0
-10
h
FE
-
DC
Current
Gain
DC CURRENT GAIN VS
COLLECTOR CURRENT
VCE =-5V
Pulsed
-0.01
TA = 150
°C
75
°C
25
°C
-25
°C
VBE (sat)
VCE (sat)
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PDF描述 |
|---|---|
| 2SA1988-A | 7 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2012 | 5 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SA2012 | 5 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SA2030T2L | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2018TL | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
| 2SA200 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -.005A .03 |
| 2SA2002 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE) |
| 2SA2004 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SA2005 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220FN |
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