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參數(shù)資料
| 型號(hào)： | 2SA2004 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220D-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 34K |
| 代理商： | 2SA2004 |
Power Transistors
2SA2004
Silicon PNP epitaxial planer type
1
For power amplification
I
Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Dielectric breakdown voltage of the package:
>
5 kV
High-speed switching
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
60
60
5
16
8
V
Collector to emitter voltage
V
Emitter to base voltage
V
EBO
I
CP
I
C
V
Peak collector current
A
Collector current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
P
C
20
W
2.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
E
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
5 A
I
C
=
5 A, I
B
=
0.25 A
I
C
=
5 A, I
C
=
0.25 A
I
C
=
4 A, I
B1
=
400 mA
I
B2
=
400 mA, V
CC
=
50 V
100
100
μ
A
μ
A
I
CEO
V
CEO
h
FE1
Collector to emitter voltage
60
V
Forward current transfer ratio
100
230
h
FE2
V
CE(sat)
V
BE(sat)
30
Collector to emitter saturation voltage
1.2
1.7
V
Base to emitter saturation voltage
V
Turn-on time
t
on
t
stg
t
f
0.2
0.5
μ
s
μ
s
μ
s
Storage time
0.1
0.15
Fall time
0.5
1.0
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
1: Base
2: Collector
3: Emitter
TO-220D Package
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2005 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220FN |
| 2SA2007 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 12A I(C) | TO-220FN |
| 2SA2007E | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 60V 12A 3-PIN(3+TAB) TO-220FN - Bulk 制造商:ROHM Semiconductor 功能描述:TRANS PNP GP 60V 12A TO220FN 制造商:ROHM Semiconductor 功能描述:Trans GP BJT PNP 60V 12A |
| 2SA2007F | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 12A I(C) | TO-220FN |
| 2SA2009 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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