- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371485 > 2SB0792 (PANASONIC CORP) For High Breakdown Voltage Low-noise Amplification PDF資料下載
參數(shù)資料
| 型號： | 2SB0792 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For High Breakdown Voltage Low-noise Amplification |
| 中文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2SB0792 |
Transistors
2SB0792
(2SB792)
, 2SB0792A
(2SB792A)
Silicon PNP epitaxial planar type
1
Publication date: March 2003
SJC00058BED
For high breakdown voltage low-noise amplification
■
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol:
2SB0792: I
2SB0792A: 2F
Rank
R
S
T
h
FE
130 to 220
185 to 330
260 to 450
Marking
symbol
2SB0792
IR
IS
IT
2SB0792A
2FR
2FS
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0792
V
CBO
150
185
150
185
5
50
100
V
2SB0792A
Collector-emitter voltage
(Base open)
2SB0792
V
CEO
V
2SB0792A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
mA
Peak collector current
I
CP
P
C
mA
Collector power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0792
V
CEO
I
C
=
100
μ
A, I
B
=
0
150
185
5
V
2SB0792A
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
μ
A, I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
=
5 V, I
C
=
10 mA
V
Collector-base cutoff current (Emitter open)
I
CBO
1
μ
A
Forward current transfer
ratio
*
2SB0792
h
FE
130
450
2SB0792A
130
330
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
4
pF
Noise voltage
NV
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
R
g
=
100 k
, Function
=
FLAT
150
mV
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0819 | For Low-Frequency Output Amplification |
| 2SB0928 | For Power Amplification |
| 2SB0928A | For Power Amplification |
| 2SB0929 | For Power Amplification |
| 2SB0929A | For Power Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0792(2SB792) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0792/2SB0792A(2SB792/2SB792A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0792. 2SB0792A (2SB792. 2SB792A) - PNP Transistor |
| 2SB07920SL | 功能描述:TRANS PNP 150VCEO 50MA SC-59 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0792A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage Low-noise Amplification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。