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參數(shù)資料
| 型號： | 2SB0928 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification |
| 中文描述： | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2SB0928 |
Power Transistors
2SB0928
(2SB928)
, 2SB0928A
(2SB928A)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00010BED
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
■
Features
High collector-emitter voltage (Base open) V
CEO
High collector power dissipation P
C
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
200
150
180
6
2
3
V
Collector-emitter voltage 2SB0928
V
CEO
V
(Base open)
2SB0928A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power
P
C
30
W
dissipation
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55
～ +
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
500
μ
A, I
E
=
0
I
C
=
5 mA, I
B
=
0
200
150
180
6
V
Collector-emitter voltage
2SB0928
V
(Base open)
2SB0928A
Emitter-base voltage (Collector open)
V
EBO
I
CBO
I
E
=
500
μ
A, I
C
=
0
V
CB
=
200 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
400 mA
V
CE
=
10 V, I
C
=
400 mA
I
C
=
500 mA, I
B
=
50 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
Collector-base cutoff current (Emitter open)
50
50
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
h
FE2
Forward current transfer ratio
60
240
50
Base-emitter voltage
V
BE
1.0
1.0
V
Collector-emitter saturation voltage
V
CE(sat)
f
T
V
Transition frequency
40
MHz
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit : mm
Rank
Q
P
h
FE1
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Note) Self-supported type package is also prepared
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0928A | For Power Amplification |
| 2SB0929 | For Power Amplification |
| 2SB0929A | For Power Amplification |
| 2SB0930 | For Power Amplification |
| 2SB0930A | For Power Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0928(2SB928) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB0928/2SB0928A(2SB928/2SB928A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0928. 2SB0928A (2SB928. 2SB928A) - PNP Transistor |
| 2SB0928A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification |
| 2SB0928A(2SB928A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
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