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參數(shù)資料
| 型號： | 2SB0819 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Low-Frequency Output Amplification |
| 中文描述： | 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 2SB0819 |
Transistors
2SB0819
(2SB819)
Silicon PNP epitaxial planar type
1
Publication date: November 2002
SJC00059BED
For low-frequency output amplification
Complementary to 2SD1051
■
Features
High collector-emitter voltage (Base open) V
CEO
Large collctor power dissipation P
C
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
h
FE
80 to 160
120 to 220
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
40
5
1.5
3
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
*
P
C
T
j
T
stg
1
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
1.5 A, I
B
=
0.15 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
50
40
V
Collector-emitter voltage (Base open)
V
Collector-base cutoff current (Emitter open)
I
CBO
1
100
10
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
h
FE
80
220
V
CE(sat)
V
BE(sat)
1
1.5
V
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
45
pF
Note)*: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0819(2SB819) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0819Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB0819R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB082020MAJL | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:SCHOTTKY BARRIER DIODE CHIPS |
| 2SB083040ML | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:SCHOTTKY BARRIER DIODE CHIPS |
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