參數(shù)資料
型號(hào): 2SB0929A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: For Power Amplification
中文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 75K
代理商: 2SB0929A
2SB0929, 2SB0929A
2
SJD00011BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
I
C
V
BE
0
0
160
40
120
80
10
30
20
40
(1)T
C
=
T
a
(2)With a 50
×
50
×
2 mm
3
Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
(1)
(2)
(3)
C
C
Ambient temperature T
a
(
°
C)
0
0
12
2
10
4
8
6
6
5
4
3
2
1
T
C
=
25
°
C
80 mA
60 mA
40 mA
30 mA
20 mA
12 mA
8 mA
4 mA
16 mA
I
B
=
100 mA
C
C
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
1.2
0.8
0.4
0
2
4
6
10
8
T
C
=
100
°
C
25
°
C
V
CE
=
4 V
25
°
C
Base-emitter voltage V
BE
(V)
C
C
0.01
0.01
0.1
1
10
100
0.1
1
10
I
C
/ I
B
=
10
25
°
C
25
°
C
T
C
= 100
°
C
C
C
Collector current I
C
(A)
0.01
0.1
1
10
V
CE
=
4 V
T
C
=
100
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(A)
1
10
10
2
10
4
10
3
0.01
0.1
1
10
V
CE
=
5 V
f
=
10 MHz
T
C
=
25
°
C
T
T
Collector current I
C
(A)
1
10
10
2
10
4
10
3
1
10
100
1
000
0.01
10
1
0.1
Non repetitive
pulse
T
C
=
25
°
C
t
=
1 ms
2
2
I
CP
I
C
t
=
10 ms
t
=
300 ms
C
C
Collector-emitter voltage V
CE
(V)
Safe operation area
R
th
t
10
2
10
1
1
10
10
3
10
2
10
4
10
4
10
3
10
2
10
1
10
1
10
2
10
3
(1)
(2)
(1)Without heat sink
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
Time t (s)
T
t
°
C
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