參數(shù)資料
型號: 2SB0932
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: For Power Switching
中文描述: 4 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: N-G1, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 85K
代理商: 2SB0932
2SB0932
2
SJD00014BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
0
0
160
40
120
80
10
30
20
40
(1)T
C
=
T
a
(2)With a 50 mm
×
50 mm
×
2 mm Al heat sink
(3)Without heat sink
(P
C
=
1.3 W)
(1)
(2)
(3)
C
C
Ambient temperature T
a
(
°
C)
0
6
5
4
3
2
1
0
10
2
4
8
6
T
C
=
25
°
C
870 mA
90 mA
60 mA
40 mA
50 mA
30 mA
20 mA
8 mA
5 mA
I
B
=
100 mA
C
C
Collector-emitter voltage V
CE
(V)
0.01
0.01
0.1
1
10
100
0.1
1
10
I
C
/ I
B
=
20
25
°
C
T
C
=
100
°
C
25
°
C
C
C
Collector current I
C
(A)
0.01
0.01
0.1
1
10
100
0.1
1
10
I
C
/ I
B
=
20
T
C
=
25
°
C
25
°
C
100
°
C
B
B
Collector current I
C
(A)
0.01
0.1
1
10
V
CE
=
2 V
T
C
=
100
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(A)
1
10
10
2
10
4
10
3
0.01
0.1
1
10
V
CE
=
10 V
f
=
10 MHz
T
C
=
25
°
C
T
T
Collector current I
C
(A)
1
10
10
2
10
4
10
3
0.1
1
10
100
1
10
10
2
1
0
3
10
4
I
E
=
0
f
=
1 MHz
T
C
=
25
°
C
C
o
Collector-base voltage V
CB
(V)
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Safe operation area
0
3.2
0.8
Collector current I
C
(A)
2.4
1.6
0.01
0.1
1
10
100
t
stg
t
on
t
f
Pulsed t
=
1 ms
Duty cycle
=
1%
I
C
/ I
B
=
30
(
I
B1
=
I
)
V
CC
=
50 V
T
C
=
25
°
C
T
o
s
f
μ
s
0.01
1
0.1
1
10
100
10
100
1
000
Non repetitive pulse
T
C
=
25
°
C
t
=
10 ms
t
=
0.5 ms
t
=
1 ms
DC
I
CP
I
C
C
C
Collector-emitter voltage V
CE
(V)
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