參數(shù)資料
型號(hào): 2SB1180A
廠商: PANASONIC CORP
元件分類(lèi): 功率晶體管
英文描述: Silicon PNP epitaxial planar type darlington
中文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 102K
代理商: 2SB1180A
2SB1180, 2SB1180A
2
SJD00056AED
V
CE(sat)
I
C
V
BE(sat)
I
C
V
BE(sat)
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
Safe operation area
0
0
160
40
120
80
5
15
10
20
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
(1)
(2)
C
C
Ambient temperature T
a
(
°
C)
0
2
6
4
8
0
5
1
2
4
3
I
B
=–2–1.8mA
–1.6mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
T
C
=25C
C
C
Collector-emitter voltage V
CE
(V)
0.1
1
10
100
0.1
1
10
C
C
Collector current I
C
(A)
I
C
/I
B
=500
T
C
=100C
–25C
25C
0.1
0.1
1
10
100
1
10
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25 C
(1)
(2)
(3)
C
C
Collector current I
C
(A)
0.1
1
10
1
100
0.1
10
B
B
Collector current I
C
(A)
I
C
/I
B
=500
T
C
=–25C
25C
100C
0.1
0.1
1
10
10
1
100
B
B
Collector current I
C
(A)
(1)
(2)
(3)
(1)I
C
/I
B
=250
(2)I
C
/I
B
=500
(3)I
C
/I
B
=1000
T
C
=25C
0.1
1
10
10
2
10
5
10
4
10
3
F
F
Collector current I
C
(A)
V
CE
=–3V
T
C
=100C
25C
–25C
0.1
1
10
100
1
10
10
2
10
3
10
4
C
o
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0.01
1
0.1
1
10
100
10
100
1
000
C
C
Collector-emitter voltage V
CE
(V)
Non repetitive pulse
T
C
=25C
t=10ms
t=300ms
t=1ms
I
CP
2
2
I
C
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