- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369080 > 2SB1181 (Rohm CO.,LTD.) Power Transistor(功率晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB1181 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor(功率晶體管) |
| 中文描述： | 功率晶體管（功率晶體管） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SB1181 |
2SB1260 / 2SB1181 / 2SB1241
Transistors
!
Electrical characteristics
(Ta=25
°
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Cob
Min.
-80
-80
-5
-
-
82
2SB1260, 2SB1181
2SB1241
2SB1260, 2SB1241
2SB1181
-
-
-
-
-
-
-
-
-
-
100
25
-
-
-
-1
-1
390
-0.4
-
-
V
I
C
=-50
μ
A
I
C
=-1mA
I
E
=-50
μ
A
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
C
=-0.1A
I
C
/I
B
=-500mA/-50mA
V
CE
=-10V, I
E
=50mA, f=30MHz
V
CB
=-10V, I
E
=0A, f=1MHz
V
V
μ
A
μ
A
-
120
-
390
-
V
MHz
f
T
-
100
-
V
CE
=-5V, I
E
=50mA, f=30MHz
MHz
pF
Typ.
Max.
Unit
Conditions
!
Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
2500
2500
1000
PQR
h
FE
2SB1260
TL
-
-
-
QR
2SB1241
PQR
2SB1181
-
TV2
-
-
T100
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82~180
120~270
180~390
!
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0
-0.1
-1
-100
-1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
C
C
(
-0.8
-1.2
-1.6
-10
-0.2 -0.4
-1.0
-1.4
-0.6
Ta=25
C
V
CE
=-
5V
Fig.2 Grounded emitter output
characteristics
0
0
-0.2
-0.8
-1.0
-0.4
-0.8
-1.2
-1.6
-0.4
-0.6
-2.0
-0.2
-0.6
-1.0
-1.4
-1.8
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta=25
C
-0.05mA
I
B
=0mA
-0.1mA
-0.15mA
-0.2mA
-0.25mA
-0.3mA
-0.35mA
-0.4mA
-0.45mA
Fig.3 DC current gain vs.
collector current
-1 -2
-5 -10 -20
-50-100-200-500
-2000
COLLECTOR CURRENT : I
C
(mA)
10
D
F
-1000
20
50
100
200
500
1000
V
CE
=-3V
-1V
Ta=25
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1260 | Power Transistor |
| 2SB1243 | Power Transistor (-60V, -3A) |
| 2SB1184 | Power Transistor (-60V, -3A) |
| 2SB1185 | Power Transistor (-60V, -3A) |
| 2SB1244 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1181F5 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252VAR |
| 2SB1181F5P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181F5Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181F5R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252AA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。