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參數(shù)資料
| 型號： | 2SB1181 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor(功率晶體管) |
| 中文描述： | 功率晶體管（功率晶體管） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 2SB1181 |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Fig.4 Collector-emitter saturation
voltage vs. collector current
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
Ta=25
C
I
C
/I
B
=20
-1 -2
-5 -10 -20
-50-100-200-500
-2000
-1000
C
C
(
COLLECTOR CURRENT : I
C
(mA)
10
Fig.5 Gain bandwidth product vs.
emitter current
1
2
5
10 20
50 100 200
5001000
1
2
5
10
20
50
100
200
500
1000
T
T
(
EMITTER CURRENT : I
E
(mA)
Ta=25
C
V
CE
=-
5V
Fig.6 Collector output capacitance
vs. collector-base voltage
-0.2
-0.1
-0.5 -1
-2
-5 -10 -20
-50 -100
1
2
5
10
20
50
100
200
500
1000
Ta=25
C
f=1MHz
I
E
=0A
C
p
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
-0.1
10
20
-0.2
-0.5
-1
-2
200
1000
-5
-10
500
100
50
Ta=25
C
f=0A
I
C
E
(
EMITTER TO BASE VOLTAGE : V
EB
(V)
-0.5
-2
-1
-5 -10 -20
-50 -100
Fig. 8 Safe operating area
(2SB1260)
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-2
-1
-0.5
-0.2
-0.1
-0.05
TSingle
C
*
nonrepetitive
pulse
I
C Max
. (Pulse)
I
C Max
.
P
W
=
1m
P
W
=0m
DC
Fig.9 Safe operating area (2SB1241)
1
2
5
0.1 0.2 0.5
10 20 50 1002005001000
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Ta=25
C
*
Single
pulse
P
W
=0m
I
C Max
. (Pulse)
P
W
=0m
DC
Printed circuit board:
1.7 mm thick with collector
copper plating at least 1 cm
2
.
-0.5
-0.2
-0.1
-1
-2
-20
-10
-5
-50 -100
-0.01
-0.05
-0.02
-0.1
-0.5
-0.2
-1
-5
-2
P
W
=0m
TSingle
C
*
nonrepetitive
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
(2SB1181)
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PDF描述 |
|---|---|
| 2SB1260 | Power Transistor |
| 2SB1243 | Power Transistor (-60V, -3A) |
| 2SB1184 | Power Transistor (-60V, -3A) |
| 2SB1185 | Power Transistor (-60V, -3A) |
| 2SB1244 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1181F5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252VAR |
| 2SB1181F5P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181F5Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181F5R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
| 2SB1181P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252AA |
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