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參數(shù)資料
| 型號： | 2SB1188T100P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2SB1188T100P |
2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Measured using pulse current.
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
82
100
50
1
390
0.8
VIC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 20V
VEB
= 4V
IC/IB
= 2A/ 0.2A
VCE
= 5V, IE=0.5A, f=100MHz
VCB
= 10V, IE=0A, f=1MHz
V
A
VCE
= 3V, IC= 0.5A
V
MHz
pF
Typ.
Max.
Unit
Conditions
0.5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T100
TL
1000
2500
PQR
hFE
PQR
2SB1188
2SB1182
TV2
2500
PQR
2SB1240
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0
0.2
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.4
1
2
5
10
20
50
100
200
500
1000
VCE
= 3V
Ta
=100°C
25
°C
40°C
Fig.2 Grounded emitter output
characteristics
0.4
0
0.8
1.2
1.6
2
0
0.1
0.2
0.3
0.4
0.5
IB
=0A
250A
500A
750A
1mA
1.25mA
1.5mA
1.75mA
2mA
2.25mA
2.5mA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
Fig.3 DC current gain vs.
collector curren ( )
DC
CURRENT
GAIN
:
h
FE
5 10 20 50 100
500 1000 2000
200
50
20
100
200
500
Ta
=25°C
COLLECTOR CURRENT : IC
(mA)
VCE
= 6V
3V
1V
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PDF描述 |
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| 2SB1188T100/P | 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1188T100Q | 功能描述:兩極晶體管 - BJT PNP 32V 2A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1188T100Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -32V, -2A, MPT |
| 2SB1188T100R | 功能描述:兩極晶體管 - BJT PNP 32V 2A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1188-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB1189 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
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