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參數(shù)資料
| 型號(hào)： | 2SB1347 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type(For high power amplification) |
| 中文描述： | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TOP-3L-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SB1347 |
1
Power Transistors
2SB1347
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±
0.5
6
1
2
±
0
2
±
0
1
2
S
10.9
±
0.5
1
2
3
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.0
±
0.3
3.0
4
2
5.45
±
0.3
0.6
±
0.2
1.5
2.7
±
0.3
1.5
2
φ
3.3
±
0.2
3
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2029
I
Features
G
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
G
Wide area of safe operation (ASO)
G
High transition frequency f
T
G
Optimum for the output stage of a HiFi audio amplifier
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
C
P
C
T
j
T
stg
Ratings
–160
–160
–5
–20
–12
120
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –160V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –8A
V
CE
= –5V, I
C
= –8A
I
C
= –8A, I
B
= – 0.8A
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
20
60
20
typ
15
400
max
–50
–50
200
–1.8
–2.0
Unit
μ
A
μ
A
V
V
MHz
pF
T
C
=25
°
C
Ta=25
°
C
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
60 to 120
80 to 160
100 to 200
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