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參數(shù)資料
| 型號： | 2SB1347 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type(For high power amplification) |
| 中文描述： | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TOP-3L-A1, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SB1347 |
2
Power Transistors
2SB1347
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
200
150
50
100
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.5W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–24
–20
–16
–12
–8
–4
T
C
=25C
–200mA
–400mA
–600mA
–800mA
–100mA
–50mA
I
B
=–1000mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–4
–1
–3
–2
0
–24
–20
–16
–12
–8
–4
T
C
=–25C
100C
25C
V
CE
=–5V
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
T
C
=100C
–25C
25C
C
C
1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
1000
100
10
3
30
300
V
CE
=–5V
T
C
=100C
25C
–25C
F
F
1
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
1000
100
10
3
30
300
V
=–5V
f=1MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
10
10000
1000
100
30
300
3000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=10ms
100ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
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