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參數(shù)資料
| 型號(hào)： | 2SB709A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | SC-59A, MPAK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 48K |
| 代理商： | 2SB709A |
1
Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
I
Features
G
High foward current transfer ratio h
FE
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–45
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–45
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
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PDF描述 |
|---|---|
| 2SB726 | Silicon PNP epitaxial planer type |
| 2SB750 | Si PNP Epitaxial Planar Darlington |
| 2SB750A | Si PNP Epitaxial Planar Darlington |
| 2SB751 | Si PNP EPITAXIAL PLANNAR DARLINGTON |
| 2SB751A | Si PNP EPITAXIAL PLANNAR DARLINGTON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB709A_0712 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SB709A_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SB709AI | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB709AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236AB |
| 2SB709A-Q | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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