參數(shù)資料
型號: 2SB709A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: SC-59A, MPAK-3
文件頁數(shù): 2/3頁
文件大小: 48K
代理商: 2SB709A
2
Transistor
2SB709A
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–120
–100
–80
–60
–40
–20
Ta=25C
–250
μ
A
–200
μ
A
–150
μ
A
–100
μ
A
–50
μ
A
I
B
=–300
μ
A
Collector to emitter voltage V
CE
(V)
C
C
0
–450
–150
–300
0
–60
–50
–40
–30
–20
–10
V
=–5V
Ta=25C
Base current I
B
(
μ
A)
C
C
0
Base to emitter voltage V
BE
(V)
–1.8
– 0.6
–1.2
0
–400
–300
–100
–250
–350
–200
–50
–150
V
=–5V
Ta=25C
B
B
μ
A
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–240
–200
–160
–120
–80
–40
V
CE
=–5V
Ta=75C
–25C
25C
C
C
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C
/I
B
=10
Ta=75C
25C
–25C
Collector current I
C
(mA)
C
C
–1
–10
–100
–1000
–3
–30
–300
0
600
500
400
300
200
100
V
CE
=–10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
F
F
0.1
1
10
100
0.3
Emitter current I
E
(mA)
3
30
0
160
120
40
100
140
80
20
60
V
=–10V
Ta=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
8
6
2
5
7
4
1
3
I
=0
f=1MHz
Ta=25C
C
o
P
C
— Ta
I
C
— V
CE
I
C
— I
B
I
B
— V
BE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
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參數(shù)描述
2SB709A_0712 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor
2SB709A_11 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor
2SB709AI 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB709AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236AB
2SB709A-Q 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR