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參數(shù)資料
| 型號： | 2SB767 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SB767 |
1
Transistor
2SB767
Marking symbol
: C
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD875
I
Features
G
Large collector power dissipation P
C
.
G
High collector to emitter voltage V
CEO
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –5V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–80
–80
–5
90
50
typ
100
– 0.2
– 0.85
120
20
max
– 0.1
330
–0.4
–1.2
30
Unit
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
90 ~ 155
130 ~ 220
185 ~ 330
Marking Symbol
CQ
CR
CS
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB767Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB767R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB767S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB768 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SB768-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
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