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參數(shù)資料
| 型號： | 2SB767 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SB767 |
2
Transistor
2SB767
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
Ta=25C
I
B
=–10mA
–1mA
–2mA
–3mA
–4mA
–5mA
–6mA
–7mA
–8mA
–9mA
Collector to emitter voltage V
CE
(V)
C
C
–1
–10
–100
–1000
–3
–30
–300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C
/I
B
=10
25C
–25C
Ta=75C
Collector current I
C
(mA)
C
C
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=–25C
25C
75C
Collector current I
C
(mA)
B
B
–1
–10
–100
–1000
–3
–30
–300
0
300
250
200
150
100
50
V
CE
=–10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
F
F
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
=–10V
Ta=25C
Emitter current I
E
(mA)
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
50
40
30
20
10
45
35
25
15
5
I
=0
f=1MHz
Ta=25C
C
o
– 0.1
Collector to emitter voltage V
CE
(V)
–1
–10
–100
– 0.3
–3
–30
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
C
C
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
Area of safe operation (ASO)
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