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參數(shù)資料
| 型號(hào)： | 2SB789A |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
| 中文描述： | 500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SB789A |
1
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SD968 and 2SD968A
I
Features
G
High collector to emitter voltage V
CEO
.
G
Large collector power dissipation P
C
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–100
–120
–100
–120
–5
–1
–0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
2SB789
2SB789A
2SB789
2SB789A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter
voltage
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
Conditions
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–100
–120
–5
90
50
typ
– 0.2
– 0.85
120
max
220
– 0.6
–1.2
30
Unit
V
V
V
V
MHz
pF
Marking symbol :
D
(2SB789)
E
(2SB789A)
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2SB789
2SB789A
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
2SB789
DQ
DR
2SB789A
EQ
ER
Marking
Symbol
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PDF描述 |
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| 2SB790 | Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) |
| 2SD969 | Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) |
| 2SB793 | Si PNP Epitaxial Planar |
| 2SB793A | Si PNP Epitaxial Planar |
| 2SB819 | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB789AQ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB789AR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB789Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB789R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | SC-62 |
| 2SB790 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:For Low-Frequency Output Application |
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