參數(shù)資料
型號: 2SB789A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency driver amplification)
中文描述: 500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINIP3-F1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 38K
代理商: 2SB789A
2
Transistor
2SB789, 2SB789A
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
Ta=25C
–1–16–18mA
–12mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
I
B
=–20mA
Collector to emitter voltage V
CE
(V)
C
C
0
–15
–9
–3
Base current I
B
(mA)
–6
–12
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
V
=–10V
Ta=25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
Ta=75C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=–25C
75C
25C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
600
500
400
300
200
100
V
CE
=–10V
Ta=75C
25C
–25C
F
F
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
=–10V
Ta=25C
Emitter current I
E
(mA)
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
50
40
30
20
10
45
35
25
15
5
I
=0
f=1MHz
Ta=25C
C
o
P
C
— Ta
I
C
— V
CE
I
C
— I
B
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
相關(guān)PDF資料
PDF描述
2SB790 Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)
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2SB819 Silicon PNP epitaxial planer type(For low-frequency output amplification)
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