參數(shù)資料
型號: 2SB938P
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Si PNP EPITAXIAL PLANAR
中文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 64K
代理商: 2SB938P
2
Power Transistors
2SB938, 2SB938A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–5
–4
–1
–3
–2
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
I
=–3.0mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–3.2
– 0.8
–2.4
–1.6
0
–10
–8
–6
–4
–2
V
CE
=–3V
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=250
25C
T
C
=100C
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
10
2
10
3
10
4
10
5
10
6
V
CE
=–3V
T
C
=100C
25C
–25C
F
F
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
I
CP
I
C
300ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
Time t (s)
T
t
(
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2SB939AP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-262VAR