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參數(shù)資料
| 型號： | 2SD1262A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type Darlington |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 2SD1262A |
1
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–7
–12
–8
45
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB939
2SB939A
2SB939
2SB939A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CB
= –80V, I
E
= 0
V
EB
= –7V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –3V, I
C
= –4A
V
CE
= –3V, I
C
= –8A
I
C
= –4A, I
B
= –8mA
I
C
= –4A, I
B
= –8mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –4A, I
B1
= –8mA, I
B2
= 8mA,
V
CC
= –50V
min
–60
–80
2000
500
typ
15
0.5
2
1
max
–100
–100
–2
10000
–1.5
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB939
2SB939A
2SB939
2SB939A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
2000 to 5000
4000 to 10000
Internal Connection
B
C
E
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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PDF描述 |
|---|---|
| 2SB939A | Silicon PNP epitaxial planar type Darlington |
| 2SB940 | Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1264A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB940A | For Power Amplification |
| 2SB941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1262AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
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