參數(shù)資料
型號: 2SB968
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For low-frequency output amplification)
中文描述: 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, U-G1, SC-63, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 53K
代理商: 2SB968
2
Power Transistors
2SB968
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
V
CER
— R
BE
I
CEO
— Ta
0
160
40
120
80
140
20
100
60
0
32
24
8
20
28
16
4
12
T
C
=Ta
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–4.0
–3.0
–1.0
–2.5
–3.5
–2.0
– 0.5
–1.5
T
C
=25C
I
B
=–40mA
–5mA
–10mA
–15mA
–20mA
–25mA
–30mA
–35mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.01
–3
–1
– 0.1
– 0.03
Collector current I
C
(A)
– 0.3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C
/I
B
=10
T
C
=100C
25C
–25C
C
C
– 0.01
–3
–1
– 0.1
– 0.03
Collector current I
C
(A)
– 0.3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
I
C
/I
B
=10
T
C
=–25C
25C
100C
B
B
1
–3
–1
– 0.1
– 0.03
Collector current I
C
(A)
– 0.3
3
10
30
100
300
1000
V
CE
=–5V
T
C
=100C
25C
–25C
F
F
10
100
1000
10000
30
Emitter current I
E
(mA)
300
3000
0
240
200
160
120
80
40
V
=–5V
f=200MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
150
120
60
90
30
I
=0
f=1MHz
T
C
=25C
C
o
0
Base to emitter resistance R
BE
(k
)
0.01
0.1
1
10
–120
–100
–80
–60
–40
–20
T
C
=25C
C
C
0
120
100
80
20
60
40
1
1000
100
10
3
30
300
V
CE
=–12V
Ambient temperature Ta (C)
I
C
I
C
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