參數(shù)資料
型號(hào): 2SC4462
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/7頁
文件大小: 36K
代理商: 2SC4462
2SC4462
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
25
V
Emitter to base voltage
4
V
Collector current
20
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
0.5
μ
A
V
CB
= 10 V, I
E
= 0
I
C
= 10 mA, I
B
= 1 mA
Collector to emitter saturation
voltage
5
V
DC current transfer ratio
h
FE
f
T
Cob
30
V
CE
= 10 V, I
C
= 3 mA
V
CE
= 10 V, I
C
= 5 mA
V
= 10 V, I
C
= 5 mA,
f = 1 MHz
Gain bandwidth product
700
1000
MHz
Collector output capacitance
0.8
pF
Conversion gain
CG
7.0
dB
V
= 12 V, I
E
= 0,
f = 900 MHz
Noise figure
NF
10.0
dB
f
OSC
= 930 Mhz (0 dBm),
f
out
= 30 MHz
Note:
Marking is “EC”.
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