參數(shù)資料
型號: 2SC4511
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴散平面晶體管)
中文描述: 6 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220F, FM20, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 24K
代理商: 2SC4511
110
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1725)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4511
120
80
6
6
3
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4511
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
2S C4511
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
Base Current I
B
(A)
1.0
1.5
C
C
(
I
C
=6A
2A
4A
0
6
4
2
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
–CaTp
0.4
1
5
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
3
5
10
100
50
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
10ms
100ms
0.02
0.1
1
0.5
5 6
30
50
100
300
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
1
3
2
4
6
5
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
80mA
50mA
30mA
20mA
150mA
100mA
I
B
=10mA
200mA
(V
CE
=4V)
0.02
0.5
6
5
1
20
50
200
100
0.1
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–6
20
10
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
10
3
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.3
t
on
(
μ
s)
0.16
typ
t
stg
(
μ
s)
2.60
typ
t
f
(
μ
s)
0.34
typ
I
(A)
0.3
V
(V)
10
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
h
FE
Rank O(50to100), P(70to140), Y(90to180)
Application :
Audio and General Purpose
相關PDF資料
PDF描述
2SC4512 Silicon NPN Triple Diffused Planar Transistor(硅NPN三倍擴散平面晶體管)
2SC4517A Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管(高壓開關晶體管))
2SC4517 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管(高壓開關晶體管))
2SC4518A Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管(高壓開關晶體管))
2SC4518 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管(高壓開關晶體管))
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