參數資料
型號： 2SC518383R
廠商： NEC Corp.
英文描述： SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 表面貼裝NPN硅高頻晶體管
文件頁數： 10/21頁
文件大?。?/td> 196K
代理商： 2SC518383R
NE68730
V
CE
= 2.0 V, I
C
= 3.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.850
0.678
0.450
0.375
0.256
0.187
0.141
0.115
0.110
0.184
ANG
-12.800
-49.700
-80.500
-91.900
-114.600
-135.300
-156.700
179.500
127.300
103.000
MAG
9.307
7.314
5.036
4.279
3.094
2.436
2.040
1.782
1.466
1.305
ANG
165.200
133.800
108.200
99.900
84.300
73.000
63.500
55.100
41.900
30.400
MAG
0.023
0.076
0.114
0.128
0.162
0.197
0.236
0.276
0.362
0.453
ANG
81.500
64.100
56.500
55.900
56.700
57.600
58.000
57.500
54.300
48.700
MAG
0.970
0.792
0.587
0.526
0.439
0.402
0.385
0.379
0.365
0.305
ANG
-9.600
-30.800
-43.100
-45.800
-49.300
-51.700
-54.100
-57.300
-65.400
-78.400
(dB)
26.071
19.833
16.452
15.241
12.810
9.908
7.874
6.578
4.866
4.201
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE687 SERIES
0.158
0.381
0.659
0.763
0.939
1.027
1.060
1.062
1.039
1.004
V
CE
= 2.0 V, I
C
= 5.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.781
0.531
0.313
0.250
0.160
0.104
0.067
0.053
0.069
0.143
-17.800
-58.400
-86.300
-96.500
-117.000
-136.200
-163.800
164.400
98.700
93.700
13.806
9.434
5.827
4.846
3.408
2.651
2.205
1.913
1.562
1.390
161.000
124.700
101.200
94.100
80.700
70.800
62.300
54.600
42.300
31.200
0.021
0.067
0.103
0.120
0.163
0.208
0.253
0.298
0.386
0.474
80.300
64.700
62.400
62.900
63.600
62.900
61.400
59.300
53.800
47.100
0.945
0.683
0.482
0.433
0.371
0.348
0.340
0.339
0.328
0.265
-12.700
-36.000
-44.100
-45.200
-46.600
-48.200
-50.400
-53.700
-62.200
-75.500
0.194
0.533
0.816
0.894
0.998
1.037
1.047
1.041
1.027
1.002
28.178
21.486
17.526
16.062
13.203
9.874
8.077
6.833
5.072
4.419
V
CE
= 2.0 V, I
C
= 20.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.447
0.200
0.103
0.081
0.054
0.046
0.049
0.057
0.086
0.140
-35.800
-84.600
-117.300
-131.600
-168.200
154.600
118.800
99.400
75.300
86.000
28.663
12.701
6.817
5.544
3.795
2.921
2.407
2.076
1.681
1.478
146.000
106.600
90.300
85.300
75.300
67.300
59.900
53.200
41.800
31.200
0.017
0.052
0.096
0.117
0.171
0.224
0.274
0.322
0.410
0.490
76.400
72.800
74.000
73.500
70.900
67.400
63.700
59.900
52.100
44.000
0.808
0.422
0.301
0.280
0.258
0.253
0.256
0.261
0.255
0.187
-24.200
-43.500
-42.600
-42.000
-42.600
-44.500
-47.300
-51.500
-61.800
-77.200
0.451
0.876
0.989
1.010
1.028
1.030
1.029
1.023
1.014
1.005
32.269
23.878
18.513
16.144
12.443
10.086
8.397
7.169
5.396
4.368
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關PDF資料
PDF描述
2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
相關代理商/技術參數
參數描述
2SC5183R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SC5183R-T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183R-T2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R
2SC5183-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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