參數(shù)資料
型號(hào)： 2SC518383R
廠商： NEC Corp.
英文描述： SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 表面貼裝NPN硅高頻晶體管
文件頁(yè)數(shù)： 7/21頁(yè)
文件大?。?/td> 196K
代理商： 2SC518383R
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE68719
V
CE
= 1.0 V, I
C
= 1.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.945
0.890
0.748
0.682
0.559
0.488
0.441
0.411
0.408
0.457
ANG
-9.900
-39.700
-74.800
-89.600
-122.400
-150.400
-176.700
158.700
110.100
64.500
MAG
3.475
3.213
2.705
2.449
1.957
1.629
1.427
1.288
1.113
0.959
ANG
MAG
0.027
0.097
0.158
0.176
0.197
0.203
0.206
0.210
0.247
0.319
ANG
82.500
62.200
40.600
32.300
17.100
7.800
2.300
-0.600
-4.600
-14.700
MAG
0.992
0.936
0.817
0.764
0.658
0.589
0.540
0.494
0.409
0.393
ANG
-6.900
-25.900
-45.200
-52.500
-65.800
-75.500
-84.200
-94.200
-123.800
-171.200
(dB)
168.900
143.800
114.000
101.900
76.300
55.800
38.000
22.100
-7.200
-35.600
0.085
0.174
0.336
0.417
0.624
0.822
0.994
1.148
1.233
1.147
21.096
15.201
12.335
11.435
9.971
9.044
8.406
5.541
3.628
2.454
V
CE
= 1.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
V
CE
= 1.0 V, I
C
= 10.0 mA
0.854
0.694
0.485
0.425
0.332
0.294
0.277
0.266
0.304
0.386
-15.800
-60.500
-102.100
-118.200
-150.100
-176.000
160.700
140.200
97.300
55.900
9.251
7.411
5.078
4.308
3.098
2.442
2.052
1.795
1.486
1.263
165.000
129.600
99.200
88.600
67.200
50.200
34.700
20.500
-6.400
-33.100
0.026
0.082
0.117
0.128
0.152
0.177
0.207
0.240
0.312
0.379
79.100
55.800
40.200
36.100
30.200
25.900
21.200
15.400
0.800
-17.300
0.969
0.792
0.582
0.517
0.421
0.368
0.331
0.295
0.212
0.215
-11.700
-40.000
-60.000
-65.700
-74.600
-80.500
-86.100
-94.200
-127.000
172.500
0.132
0.312
0.575
0.683
0.902
1.034
1.093
1.123
1.108
1.074
25.512
19.561
16.375
15.271
13.092
10.273
8.101
6.608
4.780
3.562
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.621
0.376
0.257
0.233
0.206
0.195
0.190
0.192
0.258
0.369
-32.800
-98.600
-144.700
-161.000
169.800
148.100
130.800
116.700
84.100
47.400
21.498
11.952
6.684
5.451
3.754
2.890
2.374
2.055
1.666
1.402
153.900
109.600
85.200
76.800
59.800
45.100
31.500
18.600
-6.900
-31.900
0.022
0.057
0.089
0.105
0.146
0.187
0.230
0.272
0.353
0.414
74.000
56.500
52.900
51.400
45.700
38.600
30.200
21.200
1.600
-19.100
0.883
0.514
0.325
0.284
0.231
0.204
0.184
0.159
0.087
0.170
-22.400
-57.600
-71.000
-74.100
-78.100
-81.300
-84.500
-91.900
-145.200
137.600
0.255
0.651
0.916
0.980
1.055
1.085
1.092
1.090
1.069
1.048
29.900
23.216
18.756
17.153
12.670
10.111
8.288
6.956
5.134
3.958
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.875
0.713
0.503
0.429
0.325
0.270
0.241
0.226
0.247
0.328
-14.200
-54.800
-92.800
-107.500
-137.400
-163.000
175.400
155.900
111.400
65.600
9.368
7.686
5.388
4.581
3.322
2.611
2.175
1.903
1.588
1.369
165.600
132.000
101.900
91.300
70.100
53.200
38.300
24.700
-1.600
-28.500
0.022
0.070
0.103
0.113
0.136
0.159
0.185
0.216
0.288
0.359
79.800
57.900
42.800
38.800
32.800
28.900
24.600
19.600
6.100
-11.900
0.975
0.817
0.615
0.551
0.453
0.402
0.368
0.337
0.256
0.245
-10.200
-35.100
-53.100
-58.300
-66.500
-72.600
-78.200
-85.800
-113.400
-168.700
0.134
0.322
0.587
0.704
0.924
1.063
1.140
1.160
1.125
1.062
26.292
20.406
17.186
16.079
13.879
10.615
8.432
7.024
5.264
4.288
V
CE
= 2.0 V, I
C
= 3.0 mA
NE687 SERIES
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2 V, I
C
= 5 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
22
5 GHz
S
11
5 GHz
90
270
180
225
315
135
45
0
10
S
12
0.1 GHz
S
21
5 GHz
S
12
5 GHz
S
21
0.1 GHz
0.25
See note on previous page.
相關(guān)PDF資料
PDF描述
2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5183R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SC5183R-T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183R-T2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R
2SC5183-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*