參數(shù)資料
型號(hào): 2SC5193-T2
廠商: NEC Corp.
英文描述: ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
中文描述: 微波低噪聲放大器NPN硅外延晶體管緊湊的Mini模具
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 65K
代理商: 2SC5193-T2
DATA SHEET
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
COMPACT MINI MOLD
Document No. P10396EJ2V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1994
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
Compact Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5193-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5193-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PACKAGE DRAWING
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.1±0.1
2
0
0
0
0
0
0
+
0
0
+
0
0
+
0
T
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