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參數(shù)資料
| 型號： | 2SC5508-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| 中文描述： | NPN硅射頻晶體管，低噪聲，高增益的功放平引腳4引腳薄型超微型模具 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SC5508-T2 |
The information in this document is subject to change without notice.
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999
FEATURES
Ideal for low-noise, high-gain amplification applications
NF = 1.1 dB, G
a
= 16 dB TYP. @f = 2 GHz, V
CE
= 2 V, I
C
= 5 mA
Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V
CE
= 2 V, I
C
= 20 mA
f
T
= 25 GHz technology
Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
Packaging Style
2SC5508
Loose product (50 pcs)
2SC5508-T2
Taping product (3 kpcs/reel)
8 mm wide emboss taping
1 pin (emitter), 2 pin (collector) feed hole direction
Remark
To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
3.3
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
tot
Note
115
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–65 to +150
°C
Note
T
A
= +25 °C (free air)
THERMAL RESISTANCE
Item
Symbol
Value
Unit
Junction to Case Resistance
R
th j-c
150
°C/W
Junction to Ambient Resistance
R
th j-a
650
°C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5508-T2-A | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,3.3V,35mA,S-MiniMold4 制造商:Renesas 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R |
| 2SC5508-T2-A(FB) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC5509-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:15GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，2V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC5509-T2-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:15GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，2V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應(yīng)商器件封裝:SOT-343 標(biāo)準(zhǔn)包裝:1 |
| 2SC5509-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
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