參數(shù)資料
型號: 2SC5859
元件分類: 功率晶體管
英文描述: 23 A, 750 V, NPN, Si, POWER TRANSISTOR
封裝: 2-21F2A, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 237K
代理商: 2SC5859
2SC5859
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 3 V (max)
High Speed
: tf(2) = 0.1 s (Typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1700
V
CollectorEmitter Voltage
VCEO
750
V
EmitterBase Voltage
VEBO
5
V
DC
IC
23
Collector Current
Pulse
ICP
46
A
Base Current
IB
11.5
A
Collector Power Dissipation
PC
210
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
相關PDF資料
PDF描述
2SC5873STPQ 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5900 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC5900 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC5947 7 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC5947 7 A, 400 V, NPN, Si, POWER TRANSISTOR
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