參數(shù)資料
型號: 2SC5994
廠商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
中文描述: 瑞展硅晶體管大電流開關(guān)應(yīng)用
文件頁數(shù): 2/4頁
文件大?。?/td> 36K
代理商: 2SC5994
2SC5994
No.8035-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
fT
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10
μ
A, IE=0
IC=100
μ
A, RBE=0
IC=1mA, RBE=
IE=10
μ
A, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
420
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Cob
9
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
135
0.9
300
1.2
100
100
50
6
30
330
40
Package Dimensions
unit : mm
2038B
Switching Time Test Circuit
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2
4
1
1.5
0.5
0.4
3.0
0.75
4.5
1.6
0.4
1
2
3
1.5
VR
RB
VCC=25V
IC=10IB1= --10IB2=700mA
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
470
μ
F
100
μ
F
PW=20
μ
s
D.C.
1%
IB1
IB2
IC -- VCE
25mA
C
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
C
Base-to-Emitter Voltage, VBE -- V
2.0
1.8
1.6
1.2
1.4
0.8
1.0
0.4
0.6
0.2
0
0.4
0
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
IT07587
5mA
10mA
15mA
20mA
IB=0
3mA
1mA
2mA
T7
°
C
2
°
C
-
°
C
VCE=2V
2.0
1.0
1.6
1.4
1.2
0.6
0.8
0.4
0.2
1.8
0
0
0.2
0.4
0.6
0.8
1.1
1.0
0.1
0.3
0.5
0.7
0.9
IT07588
5A
3A
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