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參數(shù)資料
| 型號(hào)： | 2SC6012 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion mesa type |
| 中文描述： | 15 A, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-94, TOP-3E-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | 2SC6012 |
2SC6012
2
SJD00321AED
P
C
T
a
I
C
V
CE
I
C
V
BE
80
60
40
20
10
30
50
70
00
50
25
75
125
100
150
Ambient temperature T
a
(
°
C)
C
C
(1)
(3)
(2)
(1)T
=
T
(2)With a 100
×
100
×
2 mm
Al heat sink
(3)Without heat sink
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9 10
C
C
Collector-emitter voltage
V
CE
(V)
1.8 A
2.0 A
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
0.2 A
I
B
=
0 A
0
1.4
1.2
1.0
0.8
0.2
Base-emitter voltage V
BE
(V)
0.6
0.4
0
2
4
6
8
10
12
C
C
V
CE
= 5
V
T
a
=
120
°
C
40
°
C
25
°
C
V
CE(sat)
I
C
h
FE
I
C
Safe operation area
10
1
0.1
0.1
0.01
10
1
C
C
Collector current I
C
(A)
T
a
=
120
°
C
25
°
C
40
°
C
I
C
/ I
B
=
4
0.1
1
10
1
100
10
F
F
Collector current I
C
(A)
T
a
=
120
°
C
25
°
C
40
°
C
V
CE
=
5 V
C
C
Collector-emitter voltage
V
CE
(V)
10
1
10
2
10
3
10
1
100
1
10
100
1 000
I
CP
I
C
D
C
t
=
1 ms
t
=
100
μ
s
t
10 ms
Non repetitive pulse
T
C
=
25
°
C
Safe operation area (Horizontal operation)
30
fH
64 kHz, T
<
90
°
C
A.S.O for a single
pulse load caused by
EHT flash over during
horizontal operation.
15
20
25
10
5
00
1
000
500
1
500
2
000
C
C
Collector-emitter voltage V
CE
(V)
< 1 mA
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