參數(shù)資料
型號: 2SC6033
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type
中文描述: 東芝晶體硅npn型外延式
文件頁數(shù): 1/5頁
文件大?。?/td> 211K
代理商: 2SC6033
2SC6033
2004-07-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6033
High-Speed Swtching Applications
DC-DC Converter Applications
Storobe Flash Applications
High DC current gain: h
FE
= 250 to 400 (I
C
= 0.3 A)
Low collector-emitter saturation: V
CE (sat)
= 0.18 V (max)
High-speed switching: t
f
= 38 ns (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
100
V
V
CEX
80
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
6
V
DC
I
C
2.5
Collector current
Pulse
I
CP
5
A
Base current
I
B
0.3
A
t = 10s
1.00
Collector power
dissipation
DC
Pc (Note 1)
0.625
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm
2
)
TSM
0
2
1.+0.2
1
2.8-0.3
0
0
0
3
2
1
0
+0.2
0
1. Base
2. Emitter
3. Collector
Unit : mm
Weight: 0.01g (Typ.)
2-3S1A
JEDEC
JEITA
TOSHIBA
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