- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30577 > 2SD1207T (SANYO SEMICONDUCTOR CO LTD) 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1207T |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 2SD1207T |
2SB892 / 2SD1207
No.930-1/5
Applications
Power supplies, relay drivers, lamp drivers, and automotive wiring.
Features
FBET and MBIT processed (Original process of SANYO).
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB892
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)4
A
Collector Dissipation
PC
1W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN930D
D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB892 / 2SD1207 PNP / NPN Epitaxial Planar SiliconTransistors
Large-Current Switching Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1207-U | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB892T | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1207R | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1207S | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB892S | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1207T-AE | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1207U | 功能描述:TRANS NPN BIPO 2A 50V MP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:* 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1208 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD1209 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial, Darlington |
| 2SD1209(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。