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參數(shù)資料
| 型號： | 2SD1611 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 中文描述： | 6 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2SD1611 |
2
Power Transistors
2SD1611
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
6
5
4
1
3
2
0
5
4
3
2
1
T
C
=25C
I
B
=8mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=50
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=2V
25C
–25C
T
C
=100C
F
F
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
10
10
2
10
3
10
4
I
=0
f=1MHz
T
C
=25C
C
o
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10
μ
s
300ms
1ms
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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|---|---|
| 2SD1614-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 20V 2A 4-Pin(3+Tab) Power Mini-Mold T/R |
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