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參數(shù)資料
| 型號： | 2SD2401Y |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT200, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SD2401Y |
151
Darlington
2SD2401
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
2
4
6
12
10
8
24
6
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
10mA
2.5mA
1.2mA
1.5mA
1.0mA
2.0mA
0.8mA
0.6mA
I B=0.4mA
02
0.5
1
5
10 12
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=4V)
1000
5000
10000
40000
Typ
0.1
1
2
0.5
1
1 0
100
1000
5
5 0
500
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
0
12
8
10
2
4
6
0
2.6
2
1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
160
120
80
40
5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
10ms
10
50
5
3
100
200
150
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=5A
I C=7A
I C=10A
(V CE=4V)
0.2
0.5
5
1 0 1 2
1
Collector Current I C(A)
DC
Current
Gain
h
FE
1000
600
5000
10000
50000
70000
125C
25C
–30C
–0.02
–0.1
–1
–10
0
20
40
100
80
60
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
160
150
5
12
1
150(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
100max
150min
5000min
2.5max
3.0max
55typ
95typ
Unit
A
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=30mA
VCE=4V, IC=7A
IC=7A, IB=7mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
(Ta=25°C)
External Dimensions MT-200
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
70
RL
(
)
10
IC
(A)
7
VBB2
(V)
–5
IB2
(mA)
–7
ton
(
s)
0.5typ
tstg
(
s)
10.0typ
tf
(
s)
1.1typ
IB1
(mA)
7
VBB1
(V)
10
2
3
1.05
+0.2
-0.1
BE
5.45±0.1
2-3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Part No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
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