- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371521 > 2SD592A (PANASONIC CORP) For Low-Frequency Output Amplification PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD592A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For Low-Frequency Output Amplification |
| 中文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 2SD592A |
Transistors
2SD0592A
(2SD592A)
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJC00189CED
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
■
Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
60
V
Collector-emitter voltage (Base open)
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
I
CP
1
A
Peak collector current
1.5
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
50
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE1
*
h
FE2
0.1
μ
A
Forward current transfer ratio
85
340
50
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
0.85
1.20
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD0601A | Silicon NPN epitaxial planer type |
| 2SD0601 | Silicon NPN epitaxial planer type |
| 2SD0602 | Silicon NPN epitaxial planer type |
| 2SD0602A | Silicon NPN epitaxial planer type |
| 2SD0638 | For Medium-Power General Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD592ANCQ | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB 2SD592AR |
| 2SD592AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592AQRSTA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SD592AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-226 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。