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參數(shù)資料
| 型號(hào)： | 2SJ162 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ162 |
2SJ160, 2SJ161, 2SJ162
4
150
100
50
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
–20
–5
–1.0
–0.2
–20
–100
–500
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–10
–0.5
–5
–10
–50
–200
Ta = 25°C
DC
Operation
(T
C = 25°C)
PW
=
100
ms
(1
Shot)
PW
=
10
ms
(1
Shot)
ID max (Continuous)
(–14.3 V,
–7 A)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
(–120 V, –0.83 A)
–2
–10
–20
–50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–8
–2
–10
–30
–40
TC = 25°C
0
–4
–6
–2
V
GS = 0
Drain
Current
I
D
(A)
–1 V
–3
–4
–5
–6
–7
–8
–9
Pch
= 100
W
–1.0
–0.8
–2.0
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–0.8
–0.2
–0.4
–1.2
–1.6
0
–0.4
–0.6
VDS = –10 V
75
T C
=
–25°C 25
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ162-E | 功能描述:MOSFET P-CH 160V 7A TO-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SJ163 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For General Switching |
| 2SJ164 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SJ165 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SJ166 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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