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參數(shù)資料
| 型號： | 2SJ182S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2SJ182S |
2SJ182(L), 2SJ182(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –2 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–100
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
resistance
—
0.28
0.40
1
—
0.40
0.55
I
D
= –2 A, V
GS
= –4 V*
I
D
= –2 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|y
fs
|
Ciss
1.6
2.7
—
S
1
Input capacitance
—
425
—
pF
Output capacitance
Coss
—
225
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
—
5
—
ns
I
D
= –2 A, V
GS
= –10 V,
R
L
= 15
Rise time
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
Turn-off delay time
—
160
—
ns
Fall time
—
85
—
ns
Body to drain diode forward
voltage
—
–1.05
—
V
I
F
= –3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
140
—
ns
I
F
= –3 A, V
= 0,
di
F
/dt = 50 A/μs
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