參數(shù)資料
型號: 2SJ182S
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET(P溝道MOSFET)
中文描述: 硅P通道MOS FET的性(P溝道MOSFET的)
文件頁數(shù): 4/8頁
文件大?。?/td> 55K
代理商: 2SJ182S
2SJ182(L), 2SJ182(S)
4
30
20
10
0
50
100
150
Case Temperature T
C
(°C)
C
Power vs. Temperature Derating
–50
–20
–2
–5
–0.5
–0.2
–0.05
–1
–10
–100
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
–10
–1
–0.1
–0.1 –0.3
–3
–30
Ta = 25°C
1ms
DCOeain(T
C
=2°C
10
μ
s
100
μ
s
i Lmtedb R
DS(on
–5
–4
–10
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–4
–1
–2
–6
–8
Pulse Test
0
–2
–3
V
GS
= –2.0 V
–3.5 V
–3.0 V
–2.5 V
–10 V
–5 V
–4 V
D
D
–5
–2
–5
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
–4
–1
–1
–3
–4
–25°C
75°C
0
–2
–3
V
= –10 V
Pulse Test
T
C
= 25°C
相關(guān)PDF資料
PDF描述
2SJ184 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
2SJ185 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
2SJ186 Silicon P-Channel MOS FET
2SJ187 Very High-Speed Switching Applications
2SJ188 Very High-Speed Switching Applications
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