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參數(shù)資料
| 型號： | 2SJ55 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 180V五（巴西）直| 8A條（?。﹟至3 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ55 |
2SJ550(L),2SJ550(S)
7
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50W
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
20
16
12
8
4
25
50
75
100
125
150
0
I
= –15 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
W
–20
–16
–12
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
= 0, 5 V
GS
–10 V
–5 V
Pulse Test
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
Repetitive
Avalanche
Energy
E
(mJ)
AR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ56 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK1197 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK12 | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17 |
| 2SK1200 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1201 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ550 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550(S)(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R |
| 2SJ550L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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